| 摘要 |
A polycrystal silicon TFT(Thin Film Transistor) and a method of manufacturing the same are provided to reduce the number of masks required for a doping process by varying thickness of a semiconductor layer so as to form an LDD(Lightly Doped Drain) region by resistance variation according to the thickness. A polycrystal semiconductor layer(216) is formed on a substrate(200) to have a step and comprised of an active layer(216a), an LDD layer(216b) and an ohmic contact layer(216c). A gate insulation layer(218) is formed on the polycrystal semiconductor layer. A gate electrode(220) is formed on the gate insulation layer correspondingly to the active layer. An interlayer insulation film(224) is formed on the gate electrode and includes contact holes(222a,222b). A source electrode(226) and a drain electrode(228) are formed on the interlayer insulation film and contacted to the ohmic contact layer through the contact holes.
|
