MONOLITHIC SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME

摘要

A monolithic semiconductor laser and a method for manufacturing the same are provided to make a constant gap of a stripe structure of a plurality of semiconductor lasers. The monolithic semiconductor laser including a plurality of semiconductor lasers comprises a semiconductor substrate(1). The first double hetero structure is formed on the first region on the semiconductor substrate, and has the first active layer(3) inserted between the first clad layers(2,4). The second hetero structure is formed on the second region on the semiconductor substrate, and has the second active layer inserted between the second clad layers. The first and the second active layer are formed with different semiconductor material each other.