RECESS CHANNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A recess channel transistor and a fabricating method thereof are provided to enlarge a width and a length by forming a groove on a substrate under a gate pattern and forming a channel along a surface of the groove. An isolation layer(12) is formed on a substrate(10) to define an active region. A gate pattern crosses an upper surface of the active region. A gate insulating layer(22) is inserted between the gate pattern and the active region. A source region and a drain region are formed within the active region adjacent to both sides of the gate pattern. A channel region(28) is defined on the active region between the source region and the drain region. A groove(20) is positioned on the active region under the gate pattern. The groove has a boundary apart from the isolation layer and a boundary apart from a sidewall extension of the gate pattern.