NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A nonvolatile semiconductor memory device and a manufacturing method thereof are provided to form stably a fine stack gate structure regardless of a thin floating gate layer and an Al2O3 layer used as an inter-gate dielectric by arranging properly isolation layers on a semiconductor substrate. A nonvolatile semiconductor memory device includes a plurality of memory cell transistors and isolation layers. Each memory cell transistor includes a floating gate(8), a control gate(2) and an inter-gate dielectric(7) between the floating gate and the control gate. At this time, the floating gate is arranged in a bit line direction. The isolation layers(28) are regularly arranged in a word line direction. The control gate is continuously arranged in the word line direction and the inter-gate dielectric is arranged in the bit line direction.