METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

A Method of fabricating Semiconductor Device is provided to form a trench having a size smaller than a limit size of an existing photo-lithography apparatus by forming a sidewall at a lateral part of an etch mask layer. An etch mask layer having an opening for exposing an isolation region is formed on a semiconductor substrate(30). A sidewall(35) is formed on a lateral part of the etch mask layer. A trench(37) is formed on the isolation region of the semiconductor substrate which is not masked by the sidewall and the etch mask layer. An isolation layer(41) is formed in the trench.