METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to enhance performance and productivity by minimizing a defect of a bit line contact regardless of an increase of capacitance of a capacitor. A first interlayer dielectric(106) is formed on a semiconductor substrate(100). A plurality of first contacts are formed within the first interlayer dielectric. A second interlayer dielectric(112) is formed on the first interlayer dielectric. A plurality of second contacts(114) are formed within the second interlayer dielectric. A third interlayer dielectric(116) is formed on the second interlayer dielectric. A cylinder-shaped capacitor is formed within the second and third interlayer dielectrics. A fourth interlayer dielectric(128) is formed to bury the cylinder-shaped capacitor and the third interlayer dielectric. A plurality of third contacts(130) are formed within the fourth interlayer dielectric. A bit line(132) passing the third contacts is formed thereon.