| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor storage device provided with a fuse element which is constituted in such a way that an electrically defective memory cell can be replaced. SOLUTION: This semiconductor storage device is provided with a fuse element 48 which records information on the replacement of a redundant circuit. Capacity sections are arranged on the lower sidewalls of groove sections 24c and 24d formed in a semiconductor substrate and the programming of the element 48 is performed by breaking the capacity sections by impressing a high voltage upon the sections. On the main surface of the semiconductor substrate, a conductive layer 50 which is electrically connected to the upper side faces of the electrodes in the capacity sections are formed so as to surround the tops of the electrodes of the capacity sections buried in the groove sections 24c and 24d. |
