NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A GaN semiconductor light emitting device and a manufacturing method thereof are provided to improve the lifetime by reducing driving voltage of the device using a transparent electrode formed with a predetermined metal group. An N-doped nitride semiconductor layer(11), a light emissive layer(12) and a P-doped nitride semiconductor layer(13) are sequentially formed on a substrate(10). The N-doped nitride semiconductor layer is partially exposed to the outside by performing mesa etching on the resultant structure. A transparent electrode(30) is formed on the P-doped nitride semiconductor layer by using a predetermined metal group. At this time, the predetermined metal group is formed by mixing a first metal for generating metal oxide and a second metal for diffusing current with each other. A first and second pad electrode(15,16) are formed on the exposed N-doped nitride semiconductor layer and the transparent electrode, respectively.