发明名称 |
Method of reclaiming silicon wafers |
摘要 |
A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating / removal process for removing a silicon wafer surface part by heating at 150 - 300°C for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer. |
申请公布号 |
EP1521296(A2) |
申请公布日期 |
2005.04.06 |
申请号 |
EP20040255729 |
申请日期 |
2004.09.21 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.);KOBE PRECISION INC. |
发明人 |
SUZUKI, TETSUO;TAKADA, SATORU |
分类号 |
H01L21/304;C23G1/00;H01L21/02;H01L21/30;H01L21/302;H01L21/306;H01L21/322;H01L21/324 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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