| 发明名称 |
Method for formation of airgaps around an interconnect |
| 摘要 |
<p>The present invention relates to a method for the production of airgaps in a semiconductor device. <??>The formation of airgaps is based on chemically and/or mechanically changing the properties of sidewalls of a hole in a first dielectric layer locally, such that the sidewalls of the hole in said first dielectric layer are converted and become etchable by a first etching substance.</p> |
| 申请公布号 |
EP1521302(A1) |
申请公布日期 |
2005.04.06 |
| 申请号 |
EP20040447219 |
申请日期 |
2004.09.30 |
| 申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC) |
发明人 |
BEYER GERALD;GUENEAU DE MUSSY, JEAN-PAUL;MAEX KAREN;SUTCLIFFE VICTOR |
| 分类号 |
H01L21/3065;H01L21/311;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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