METHOD OF FORMING COPPER WIRING IN SEMICONDUCTOR DEVICE

摘要

A method of forming a copper line of a semiconductor device is provided to improve the reliability of the copper line by restraining pores of a damascene pattern from being exposed to the outside through its sidewalls using a plasma damage layer. A porous dielectric layer(22) with porogens(20) is formed on a substrate(21) with a predetermined structure. A damascene pattern(23) with a plasma damage layer(30) at its sidewalls is formed by etching selectively the dielectric layer. Pores(200) are formed in the dielectric layer by performing a porogen burn-out process thereon. A copper diffusion barrier(24) and a copper seed layer(25) are sequentially formed along an upper surface of the resultant structure. A copper film(26) for filling completely the damascene pattern is formed thereon.