| 摘要 |
In an exposure system, a predetermined wafer (5) is exposed with the first exposure layout by using a projection optical system (4) for projecting the pattern of a reticle (2) onto the wafer, an illumination device (10) and light-receiving device (11) for detecting a plurality of plane positions on the wafer (5), and a driving unit for driving the wafer (5) along the optical axis of the projection optical system (4). Prior to the second exposure with the second exposure layout at the second exposure field size, a position where a plane position is to be detected is determined on the basis of at least one of the first exposure field size, the first exposure layout, and underlayer information of the first exposure. Then, the plane position is detected.
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