| 摘要 |
A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)<2+> functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
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