发明名称 Substrate processing apparatus and substrate processing method
摘要 A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.
申请公布号 US6875280(B2) 申请公布日期 2005.04.05
申请号 US20010780951 申请日期 2001.02.09
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 IKEDA KAZUHITO;NISHITANI EISUKE;SAKUMA HARUNOBU;NAKAGOMI KAZUHIRO
分类号 H01L21/205;C23C16/44;C23C16/455;C23C16/458;C23C16/54;H01L21/31;H01L21/677;H01L21/687;(IPC1-7):C23C16/00;H01L21/00 主分类号 H01L21/205
代理机构 代理人
主权项
地址