发明名称 Film forming apparatus and film forming method
摘要 Coating an insulating film on a substrate, heating the substrate at a pressure higher than an atmospheric pressure in a chamber, followed by the curing process performed at a pressure lower than the atmospheric pressure in a separate chamber. With this process, the desorption of the porogen from the insulating film during heating can be restrained therefore an insulating film of high quality can be formed.
申请公布号 US6875283(B2) 申请公布日期 2005.04.05
申请号 US20030440120 申请日期 2003.05.19
申请人 TOKYO ELECTRON LIMITED 发明人 NISHIBAYASHI TAKAHIRO
分类号 G03F7/38;B05C9/14;B05D3/02;H01L21/02;H01L21/31;H01L21/316;H01L21/768;(IPC1-7):C23C16/52;C23C16/00;B05C11/00 主分类号 G03F7/38
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