发明名称 Field-effect organic transistor
摘要 It is an object of the present invention to solve the problems of the conventional organic transistors, such as a low mobility, a high threshold voltage and fluctuation of a threshold voltage in driving for a long period. The field-effect organic transistor of the present invention comprises 3 electrodes being source, drain and gate electrodes, a gate insulating layer and an organic semiconductor layer, wherein the organic semiconductor layer contains an organic semiconductor having 2 or more repeating units, each of the repeating units having a condensed aromatic ring compound having 10 or more conjugate double bonds and 3 two-fold axes.
申请公布号 US6875996(B2) 申请公布日期 2005.04.05
申请号 US20040847856 申请日期 2004.05.19
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAMURA SHINICHI
分类号 H01L51/05;H01L29/786;H01L51/00;H01L51/30;(IPC1-7):H01L35/24 主分类号 H01L51/05
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