发明名称 |
Method for reactive ion etch processing of a dual damascene structure |
摘要 |
A method for implementing dual damascene processing includes forming a first hardmask layer over an interlevel dielectric layer, and forming a second hardmask layer over the first hardmask layer. A trench pattern is opened within a third hardmask layer formed over the second hardmask. A first etch process is implemented so as to define a via pattern completely through the second hardmask layer and partially through the first hardmask layer, and a second etch process is implemented to transfer the trench pattern and the via pattern into the interlevel dielectric layer.
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申请公布号 |
US6875688(B1) |
申请公布日期 |
2005.04.05 |
申请号 |
US20040709630 |
申请日期 |
2004.05.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AMERICA WILLIAM G.;KUMAR KAUSHIK A. |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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