发明名称 |
Method for forming quadruple density sidewall image transfer (SIT) structures |
摘要 |
A method is provided for forming a quadruple density sidewall image transfer (SIT) structure. Oxide spacers are formed on opposite sidewalls of a first mandrel. The oxide spacers form a second mandrel. Then sidewall spacers are formed on opposite sidewalls of the oxide spacers forming the second mandrel. A pattern of the sidewall spacers is used to form the quadruple density sidewall image transfer (SIT) structure. The method of the invention enables formation of four well-controlled lines for each lithographically minimum pitch dimension.
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申请公布号 |
US6875703(B1) |
申请公布日期 |
2005.04.05 |
申请号 |
US20040760500 |
申请日期 |
2004.01.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK CHARLES;HOLMES STEVEN JOHN;HORAK DAVID VACLAV;KOBURGER, III CHARLES WILLIAM;MITCHELL PETER H. |
分类号 |
H01L21/033;H01L21/28;H01L21/3213;H01L21/461;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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