Methods for producing a highly doped electrode for a field effect transistor

摘要

A highly localized diffusion barrier is incorporated into a polysilicon line to allow the doping of the polysilicon layer without sacrificing an underlying material layer. The diffusion barrier is formed by depositing a thin polysilicon layer and exposing the layer to a nitrogen-containing plasma ambient. Thereafter, the deposition is resumed to obtain the required final thickness. Moreover, a polysilicon line is disclosed, having a highly localized barrier layer.