| 摘要 |
A method and an apparatus for maintaining a word line pass bias using a ROM(Read Only Memory) in an NAND flash memory are provided to prevent time mismatching between program operation and read operation of the NAND flash memory by separating program precharge control signals in a ROM block according to their own destination. A word line pass bias maintenance circuit(500) is comprised of a ROM block(510), a synchronization circuit(520), a precharge control circuit(310), a precharge circuit(320), a memory cell array(330), and a discharge circuit(340). The ROM block is logics or circuits connected to the memory cell array. The ROM block transmits a program precharge signal, a program precharge delay signal, a read precharge signal, and a read precharge delay signal to the precharge control circuit. The program precharge signal and the program precharge delay signal are transmitted to a precharge control circuit in an X-decoder through a program precharge synchronization block.
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