发明名称 Contact printing using a magnified mask image
摘要 Improvements in the fabrication of integrated circuits are driven by the decrease of the size of the features printed on the wafers. Current lithography techniques limits have been extended through the use of phase-shifting masks, off-axis illumination, and proximity effect correction. More recently, liquid immersion lithography has been proposed as a way to extend even further the limits of optical lithography. This invention described a methodology based on contact printing using a projection lens to define the image of the mask onto the wafer. As the imaging is performed in a solid material, larger refractive indices can be obtained and the resolution of the imaging system can be increased.
申请公布号 US2005068639(A1) 申请公布日期 2005.03.31
申请号 US20030672620 申请日期 2003.09.26
申请人 FORTIS SYSTEMS INC. 发明人 PIERRAT CHRISTOPHE;WONG ALFRED KWOK-KIT
分类号 G02B13/14;G03F7/20;(IPC1-7):G02B9/00 主分类号 G02B13/14
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