Semiconductor device and method for fabricating the same

摘要

A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semiconductor substrate, an intrinsic base region having a junction surface with the collector layer and made of a second semiconductor of a second conductive type, and an emitter region having a junction surface with the intrinsic base region and made of a third semiconductor of the first conductive type. A periphery of the intrinsic base region is surrounded by an insulating region extending from the collector layer to the semiconductor substrate.