发明名称 |
Nonvolatile memory cell employing a plurality of dielectric nanoclusters and method of fabricating the same |
摘要 |
A nonvolatile memory cell employing a plurality of dielectric nanoclusters and a method of fabricating the same are disclosed. In one embodiment, the nonvolatile memory cell comprises a semiconductor substrate having a channel region. A control gate is disposed above the channel region. A control gate dielectric layer is disposed between the channel region and the control gate. A plurality of dielectric nanoclusters are disposed between the channel region and the control gate dielectric layer. Each nanocluster may be separated from adjacent nanoclusters by the control gate dielectric layer. A tunnel oxide layer is disposed between the plurality of dielectric nanoclusters and the channel region. Further, a source and a drain are formed in the semiconductor substrate.
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申请公布号 |
US2005067651(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040944382 |
申请日期 |
2004.09.16 |
申请人 |
KIM KI-CHUL;LIM BYOU-REE;KIM SANG-SU;LEE BYOUNG-JIN;CHO IN-WOOK |
发明人 |
KIM KI-CHUL;LIM BYOU-REE;KIM SANG-SU;LEE BYOUNG-JIN;CHO IN-WOOK |
分类号 |
H01L27/115;H01L21/28;H01L21/336;H01L29/423;H01L29/51;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/115 |
代理机构 |
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