发明名称 METHOD OF FORMING DIELECTRIC LAYERS WITH LOW DIELECTRIC CONSTANTS
摘要 A method (100) of depositing a dielectric material includes providing (101) a substrate with at least one layer over the substrate. The method further includes pre-wetting (102) a top surface of a top layer with a substance, spin coating (103) the solution and forming (104) the dielectric material. The dielectric material is illustratively SiO2 that is relatively porous, and has a relatively low dielectric constant. The pre-wetting results in a reduction in processing costs due to a reduction in lost solution. Moreover, the dielectric layer (209) has an improved thickness uniformity.
申请公布号 WO2005029567(A1) 申请公布日期 2005.03.31
申请号 WO2004IB51793 申请日期 2004.09.18
申请人 KONINKLIJKE PHILIPS ELECTRONICS, N.V.;SACHDEV, HARBANS;LEUNG, GARKAY;RAPP, JOHN;MATERA-LONGO, MARY;SARMA, NARA;MEISNER, STEPHEN 发明人 SACHDEV, HARBANS;LEUNG, GARKAY;RAPP, JOHN;MATERA-LONGO, MARY;SARMA, NARA;MEISNER, STEPHEN
分类号 H01L21/312;H01L21/316 主分类号 H01L21/312
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