METHOD OF FORMING COMPOUND SEMICONDUCTOR THIN FILM ON SI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of easily forming a high-quality compound semiconductor thin film on an Si substrate without conducting a complicated thin film formation process. SOLUTION: A buffer layer 2 formed of AlSb and having a thickness of 5 nm is formed on the Si substrate 1 at any temperature between 300°C and 560°C, and then a GaSb compound semiconductor thin film 3 is formed on the buffer layer 2. The AlSb buffer layer 2 having a coefficient of thermal expansion between those of Si and GaSb serves as the absorber of a strain generated at the time of temperature drop of the formed crystals. Since AlSb, which is a strong crystal because Al has a strong chemical bond, is formed thin on the Si substrate, the buffer layer 2 also serves as a buffer against a difference in lattice constant between Si and GaSb. COPYRIGHT: (C)2005,JPO&NCIPI