发明名称 FILM-FORMING APPARATUS AND FILM-FORMING METHOD
摘要 <p>Disclosed is a film-forming apparatus (10) which comprises a plasma generation chamber (14) for producing a plasma wherein the pressure is increased by a process gas, a film formation chamber (20) wherein a substrate is contained and a film is formed on the substrate, and a separation plate (17) for separating the plasma generation chamber (14) and the film formation chamber (20) which plate has a plurality of holes. The holes of the separation plate (17) are formed to have a diameter such that the pressure in the plasma generation chamber (14) is 2.0 or more times higher than the pressure in the film formation chamber (20). The film-forming apparatus (10) further comprises a means for applying a certain bias voltage between the plasma generation chamber (14) and the film formation chamber (20).</p>
申请公布号 WO2005028703(A1) 申请公布日期 2005.03.31
申请号 WO2004JP13357 申请日期 2004.09.14
申请人 TOKYO ELECTRON LIMITED;SAMUKAWA, SEIJI;NOZAWA, TOSHIHISA 发明人 SAMUKAWA, SEIJI;NOZAWA, TOSHIHISA
分类号 C23C16/455;C23C16/452;C23C16/509;C23C16/511;H01J37/32;H01L21/31;H01L21/314;(IPC1-7):C23C16/455 主分类号 C23C16/455
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