发明名称 DYNAMIC CONTROL OF CAPACITANCE ELEMENTS IN FIELD EFFECT SEMICONDUCTOR DEVICES
摘要 <p>A field effect device includes at least one segmented field plate, each of the at least one segmented field plates having plurality of segments that each form it plate of a capacitor, wherein the field effect device is connected to an electronic element that dynamically connects selected segments to selectively set a gate-to-drain and a drain-to-source capacitance. An ultrasonic device includes a transducer coupled tc&lt;,&gt; a switching d­evice that switches the transducer between a transmit mode and a receive mode switching device, wherein the switching device includes the field effect device.</p>
申请公布号 WO2005029586(A1) 申请公布日期 2005.03.31
申请号 WO2004IB51809 申请日期 2004.09.21
申请人 KONINKLIJKE PHILIPS ELECTRONICS, N.V.;PETRUZZELLO, JOHN;LETAVIC, THEODORE;DUFORT, BENOIT 发明人 PETRUZZELLO, JOHN;LETAVIC, THEODORE;DUFORT, BENOIT
分类号 H01L21/02;H01L29/06;H01L29/40;(IPC1-7):H01L29/06 主分类号 H01L21/02
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