| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding device which can manufacture an uniform semiconductor device, capable of efficiently preventing oxidation. <P>SOLUTION: A continuous space is formed of a first space, which is formed of a gas supply nozzle 33 provided near the periphery of a semiconductor wafer 5 placed on a heater plate 4 mounted on a bonding stage 3 and a chamber top face cover 11, and a second space, which is formed of a gas supply nozzle 23 mounted on a head cover 21 of a bonding head and the chamber top face cover 11, via the bonding head moving notch 11a of the chamber top face cover 11. An uniform semiconductor device can be manufactured by supplying an inert gas for oxidation prevention of the semiconductor wafer 5 performed a bonding work to the space to a necessary minimum. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
