发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a data retention and to stabilize an operation of a nonvolatile semiconductor memory device which uses a MOS transistor. <P>SOLUTION: The nonvolatile semiconductor memory device comprises a first bit cell 10 including a first PMOS transistor 11 with its source and drain connected to be a control gate and a first NMOS transistor 13 sharing a floating gate 12 with the transistor 11, a second bit cell 20 including a second PMOS transistor 21 with its source and drain connected to be a control gate, and a second NMOS transistor 23 sharing a floating gate with the transistor 21, and a differential amplifier 30 which receives an input signal from each drain of the transistor 13 and the transistor 23. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005085954(A) |
申请公布日期 |
2005.03.31 |
申请号 |
JP20030315808 |
申请日期 |
2003.09.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
AGATA MASASHI;SHIRAHAMA MASANORI;KAWASAKI TOSHIAKI;NISHIHARA RYUJI |
分类号 |
G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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