发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve a data retention and to stabilize an operation of a nonvolatile semiconductor memory device which uses a MOS transistor. <P>SOLUTION: The nonvolatile semiconductor memory device comprises a first bit cell 10 including a first PMOS transistor 11 with its source and drain connected to be a control gate and a first NMOS transistor 13 sharing a floating gate 12 with the transistor 11, a second bit cell 20 including a second PMOS transistor 21 with its source and drain connected to be a control gate, and a second NMOS transistor 23 sharing a floating gate with the transistor 21, and a differential amplifier 30 which receives an input signal from each drain of the transistor 13 and the transistor 23. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005085954(A) 申请公布日期 2005.03.31
申请号 JP20030315808 申请日期 2003.09.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 AGATA MASASHI;SHIRAHAMA MASANORI;KAWASAKI TOSHIAKI;NISHIHARA RYUJI
分类号 G11C16/02;G11C16/04;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 G11C16/02
代理机构 代理人
主权项
地址