| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor in which hydrogen is not easily trapped in a silicone oxide film formed by a plasma CVD method. SOLUTION: In the manufacturing method of the thin-film transistor, the silicone oxide film 6 is formed first on a quartz substrate 2 by the plasma CVD method using a process gas in which a gas flow rate of a N<SB>2</SB>O gas is 40 times or more as much as a flow rate of a SiH<SB>4</SB>gas, by which the number of Si-OH bonds in the silicone oxide film 6 is larger. When the silicone oxide film 6 is annealed, a silicone oxide film 8 with less dangling bonds is obtained. Furthermore, the thin-film transistor TF is formed on the silicone oxide film 8, then a silicone oxide film 18 with less dangling bonds as the silicone oxide film 8 is formed on the thin-film transistor TF, by which hydrogen is hardly trapped in the silicone oxide films 8, 18 in hydrogen termination treatment. COPYRIGHT: (C)2005,JPO&NCIPI
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