| 摘要 |
The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
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