| 发明名称 |
FABRICATION OF SEMICONDUCTOR DEVICES |
| 摘要 |
A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The methodincludes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer;(b) electroplating a relatively thick layer of the conductive metal on the seed layer; and(c) removing the substrate.A corresponding semiconductor device is also disclosed. |
| 申请公布号 |
WO2005029573(A1) |
申请公布日期 |
2005.03.31 |
| 申请号 |
WO2003SG00223 |
申请日期 |
2003.09.19 |
| 申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED;KANG, XUEJUN;WU, DAIKE;PERRY, EDWARD ROBERT |
发明人 |
KANG, XUEJUN;WU, DAIKE;PERRY, EDWARD ROBERT |
| 分类号 |
H01L21/027;H01L21/285;H01L21/4763;H01L23/36;H01L23/367;H01L23/373;H01L31/024;H01L31/052;H01L31/18;H01L33/32;H01L33/36;H01L33/44;H01S5/02;H01S5/024;H01S5/042;H01S5/323 |
主分类号 |
H01L21/027 |
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