发明名称 |
FABRICATION OF CONDUCTIVE METAL LAYER ON SEMICONDUCTOR DEVICES |
摘要 |
<p>A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps:(a) applying to the ohmic contact layer a seed layer of a thermally conductive metal;(b) electroplating a relatively thick layer of the conductive metal on the seed layer; and(c) removing the substrate.A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.</p> |
申请公布号 |
WO2005029572(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
WO2003SG00222 |
申请日期 |
2003.09.19 |
申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED;KANG, XUEJUN;WU, DAIKE;PERRY, EDWARD ROBERT |
发明人 |
KANG, XUEJUN;WU, DAIKE;PERRY, EDWARD ROBERT |
分类号 |
H01L21/285;H01L21/4763;H01L23/36;H01L23/367;H01L23/373;H01L31/024;H01L31/052;H01L31/18;H01L33/06;H01L33/32;H01L33/40;H01L33/44;H01S5/02;H01S5/024;H01S5/042;H01S5/323;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|