PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATING APPARATUS

摘要

A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate (10) in reactor (1); and unloading the substrate (10) after film formation from the reactor (1) and thereafter effecting forced air cooling of the interior of the reactor (1) while the substrate (10) is absent in the reactor (1). The stress of deposited film adhering in the reactor (1) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.