METHODS OF FABRICATING A SEMICONDUCTOR DEVICE COMPRISING ALLOY LAYERS ON UPPER REGIONS OF METAL WIRES

摘要

A method for fabricating a semiconductor device having an alloy layer in the upper region of a metal interconnection is provided to effectively control electromigration and stress migration by making the metal interconnection have an upper surface composed of an alloy layer and by making the metal interconnection have a lower surface and a lateral surface surrounded by a metal diffusion barrier layer pattern. An interlayer dielectric(20) on a semiconductor substrate(10) is selectively etched to form at least one opening part defining a metal interconnection region. A metal diffusion barrier layer is formed on the interlayer dielectric having the opening part. A metal layer pattern is formed in the opening part wherein the lower surface and the lateral surface of the metal layer pattern are surrounded by the metal diffusion barrier layer. An alloying element providing layer in contact with the upper surface of the metal layer pattern is formed. The metal layer pattern reacts with the alloying element providing layer by a heat treatment process to form an alloy layer.