发明名称 SOLID STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus that can prevent oblique light from entering a photodiode without delaying the operation of a gate electrode. <P>SOLUTION: In the solid state imaging apparatus, light receiving elements 54 are formed at regular intervals in a matrix shape in a light receiving area defined on a semiconductor substrate 51 and include light receiving sections that are areas capable of receiving light, and a plurality of readout electrodes 53 are provided on the semiconductor substrate 51 in response to the plurality of light receiving elements 54 so as to read out electric charges produced by the light receiving elements 54. A plurality of wirings 57 cover the plurality of readout electrodes 53 and apply voltage to the same, and a plurality of reflection walls 62 are formed in an area above the wirings 57 in a grid-like shape so as to divide respective partitions of the light receiving elements 54, thus reflecting part of light entering from above to the semiconductor substrate 51 onto the light receiving section of each light receiving element 54. The plurality of reflection walls 62 are electrically insulated from the wirings 57. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005086186(A) 申请公布日期 2005.03.31
申请号 JP20030320227 申请日期 2003.09.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KURIYAMA TOSHIHIRO
分类号 H01L27/148;H01L27/14;H01L27/146;H01L31/0232;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/148
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