| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC single crystal by which the single crystal having a flat growth surface can be grown highly stably without being affected by the fluctuation of growth conditions. <P>SOLUTION: The SiC single crystal is grown from an SiC seed crystal held directly below the surface of an Si melt as a starting point while maintaining such a temperature gradient that the temperature is reduced from the inside of the melt toward the surface of the Si melt in a graphite crucible. At least one kind of metal selected from the group consisting of Al, Ga, In, As, Sb, Au, Ag, and Pt is added into the Si melt in an amount of 1 to 30 wt.%. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
