| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor element in a normally-off state which can allow the flow of a drain current of higher current density. SOLUTION: The semiconductor element comprises an n-type drift layer 2 formed on a silicon carbide substrate 1, a p-type well region 3 formed on the upper part of the drift layer, an n-type accumulation channel layer 6 formed on the n-type drift layer 2 and the p-type well region 3, a gate insulating film 5 and a gate electrode 8 formed and provided on the accumulation channel layer 6, a first p-type impurity-doped layer 7a which is formed to the region located at the lower part of both ends of the gate electrode 8 in the accumulation channel layer 6 and includes a carrier of a concentration higher than that of the p-type well region 3, an n-type source contact region 4 and a second p-type impurity-doped layer 7b formed on the p-type well region 3, a source electrode 9 provided on the source contact region 4, and a drain electrode 10 provided on the rear surface of the silicon carbide substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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