| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heating body made of a substrate containing MoSi<SB>2</SB>useful to a heat treatment furnace for a semiconductor manufacturing device (including an oxidation and diffusion furnace) and excellent in thermal shock resistance as a main constituent. <P>SOLUTION: In a method for manufacturing a heating body containing MoSi<SB>2</SB>excellent in thermal shock resistance as the main constituent, an MoSi<SB>2</SB>powder and a glass powder as materials for the heating body are mixed with an organic binder besides, and a compact is made of this mixture, to manufacture the heating body having a glass phase of 6 to 16 vol% (except for an oxidized surface film) inside the heating body substrate, where Fe, Na, and K as impurities in which the glass powder contains are 0.1 wt ppm or less, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
