| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a misalignment of finished dimension of a resist pattern caused by optical proximity effect. <P>SOLUTION: When a photomask having a transparent portion and an optical shielding portion for performing exposure on a resist 7 is formed, a process wherein a region in which a line portion 13a and a contact portion 13b of a pattern of the photomask are adjacent is extracted, and a first mask 11 constituted of the line portion 13a and a second mask 12 constituted of the contact portion 13b are formed, a process wherein exposure is performed on the resist 7 under a first lighting condition by using the first mask 11, and a process wherein exposure is performed on the resist 7 under a second lighting condition by using the second mask 12 are involved. As a result, an increase of dimension of the line portion 13a is restrained which is caused by optical proximity effect due to large pattern dimension of the contact portion 13b. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
