DEPOSITING METHOD FOR INORGANIC ALIGNMENT LAYER, INORGANIC ALIGNMENT LAYER, SUBSTRATE FOR ELECTRONIC DEVICE, LIQUID CRYSTAL PANEL, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide an inorganic alignment layer having excellent light fastness and capable of generating a pretilt angle, to provide a substrate for an electronic device, a liquid crystal panel and an electronic equipment provided with the inorganic alignment layer and to provide a depositing method for the inorganic alignment layer. SOLUTION: The depositing method for the inorganic alignment layer wherein the inorganic alignment layer is deposited on a base material has a first milling step for irradiating the surface of the base material on which the inorganic alignment layer is to be deposited with an ion beam from a direction inclined at a prescribed angleθato the vertical direction of the surface, a film-depositing step for depositing a film constituted principally of an inorganic material on the base material which has been irradiated with the ion beam and a second milling step for irradiating the surface of the film with an ion beam from a direction inclined by a prescribed angleθbto the vertical direction of the surface. COPYRIGHT: (C)2005,JPO&NCIPI