| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the image quality of a solid-state imaging device and to make the device finer in size by increasing the frame rate of the device and making the design of an impurity profile easier. <P>SOLUTION: The solid-state imaging device is provided with photoelectric conversion elements PD, storage wells 4 which store light generating charges, and modulating wells 5 which hold transferred light generating charges. The device is also provided with modulation transistors TM which control the threshold voltages of channels, transfer control elements TT which control the transfer of the light generating charges, and discharge-of-unnecessary-charge control elements TL. The control element TL causes the charges overflowing from the storage wells 4 to be discharged through unnecessary-charge discharging routes RL connected to the storage wells 4 during a period, except the period during which the light generating charges are transferred from the storage wells 4 to the modulating wells 5 by controlling the potential barriers of the routes RL. In addition, the device is also provided with discharge-of-residual-charge control elements TC which cause residual charges left in the modulating wells 5 to be discharged through residual-charge discharging routes RC connected to the modulating wells 5, by controlling the potential barriers of the routes RC. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
