发明名称 |
HEAT TREATING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SUBSTRATE, AND TREATING METHOD OF SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treating apparatus for preventing the slip dislocation defects of a substrate that occur during heat treating and flaws of the rear surface of the substrate from occurring and for producing a high quality semiconductor device or a substrate, and provide a manufacturing method of the semiconductor device, a manufacturing method of the substrate, and a treating method of the substrate. SOLUTION: In the heat treating apparatus for treating a substrate 68 with the substrate being supported by a substrate support 30, the substrate support 30 includes a main body 56 and a support 58 provided to the main body 56 and contacting with the substrate 68, in which the support 58 is configured so as to contact with the substrate 68 only within a part of the rear surface corresponding to the region from the edge of the substrate 68 to the region for producing a device. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005086132(A) |
申请公布日期 |
2005.03.31 |
申请号 |
JP20030319414 |
申请日期 |
2003.09.11 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
IZUMI MANABU;YOSHIDA HIDENARI |
分类号 |
H01L21/683;H01L21/22;H01L21/31;H01L21/324;H01L21/68;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/683 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|