| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a hetero bipolar transistor, in which the activation rate of carbon added to a base layer as a p-type impurity is high. SOLUTION: In an epitaxial wafer for a heterobipolar transistor, including a collector layer 3, a base layer 4, and an emitter layer 5 on a semi insulating InP substrate 1, hydrogen atoms contained into the base layer 4 are consumed and the activation rate of carbon impurity is improved by using an organic phosphorous compound, such as trimethylphosphate as the raw material for epitaxial growth of all or a part of the emitter layer 5. COPYRIGHT: (C)2005,JPO&NCIPI
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