| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a diode, a protective transistor, a protective resistor and the like provided to a conventional protective circuit are required to be comparatively large in area so as to protect the conventional protective circuit against damage caused by an abnormal high voltage applied to an input terminal, and furthermore an abnormal voltage applied to the input terminal of an interlayer film located below a bump electrode causes a dielectric breakdown to an interlayer film below the bump electtrode. SOLUTION: A MOS transistor, a diode, and a resistor are provided in a part of a region or a larger region just under the bump electrode, and an area occupied by the input/output circuit of an IC chip is reduced. A conductive impurity layer provided in the region just under the bump electrode is kept at the same potential with the bump electrode, so that an insulating film located under the bump electrode can be protected against a dielectric breakdown. COPYRIGHT: (C)2005,JPO&NCIPI
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