发明名称 |
Method of fabrication of a substrate for an epitaxial growth |
摘要 |
The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.
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申请公布号 |
US2005066886(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040827437 |
申请日期 |
2004.04.20 |
申请人 |
AKATSU TAKESHI;AULNETTE CECILE;GHYSELEN BRUNO |
发明人 |
AKATSU TAKESHI;AULNETTE CECILE;GHYSELEN BRUNO |
分类号 |
C30B25/02;C30B29/52;H01L21/20;H01L21/762;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14;C30B1/00;H01L21/36 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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