Method for forming fine patterns of semiconductor device using vapor phase silylation,申请号KR20020048129-传众专利搜索

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发明名称	Method for forming fine patterns of semiconductor device using vapor phase silylation
摘要
申请公布号	KR100480611(B1)	申请公布日期	2005.03.31
申请号	KR20020048129	申请日期	2002.08.14
申请人		发明人
分类号	H01L21/027;G03F7/40;(IPC1-7):H01L21/027	主分类号	H01L21/027
代理机构		代理人
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