| 发明名称 |
MOSFET structures with conductive niobium oxide gates |
| 摘要 |
MOSFET gate structures are provided comprising a niobium monoxide gate, overlying a gate dielectric. The niobium monoxide gate may have a low work function suitable for use as an NMOS gate.
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| 申请公布号 |
US2005067664(A1) |
申请公布日期 |
2005.03.31 |
| 申请号 |
US20030677006 |
申请日期 |
2003.09.30 |
| 申请人 |
GAO WEI;ONO YOSHI |
发明人 |
GAO WEI;ONO YOSHI |
| 分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/423;H01L29/49;H01L29/51;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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