发明名称 Surface acoustic wave element and method for fabricating semiconductor device
摘要 A template 3 manufactured to have high-accuracy protrusions and recesses in advance by a lithography technology employing an electron beam is pressed against a resist film 2 applied onto a substrate 1 thus transferring a resist pattern 5. A thin metal film 6 foe electrode s then formed on the resist pattern 5 formed by transfer and then it is stripped off by a lift-off method along with the resist film 2.
申请公布号 US2005070040(A1) 申请公布日期 2005.03.31
申请号 US20040501762 申请日期 2004.07.19
申请人 NEC CORPORATION 发明人 HATTORI WATARU
分类号 H03H3/08;(IPC1-7):H01L21/00 主分类号 H03H3/08
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