发明名称 |
Surface acoustic wave element and method for fabricating semiconductor device |
摘要 |
A template 3 manufactured to have high-accuracy protrusions and recesses in advance by a lithography technology employing an electron beam is pressed against a resist film 2 applied onto a substrate 1 thus transferring a resist pattern 5. A thin metal film 6 foe electrode s then formed on the resist pattern 5 formed by transfer and then it is stripped off by a lift-off method along with the resist film 2.
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申请公布号 |
US2005070040(A1) |
申请公布日期 |
2005.03.31 |
申请号 |
US20040501762 |
申请日期 |
2004.07.19 |
申请人 |
NEC CORPORATION |
发明人 |
HATTORI WATARU |
分类号 |
H03H3/08;(IPC1-7):H01L21/00 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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