| 发明名称 |
Oxide-nitride stack gate dielectric |
| 摘要 |
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
|
| 申请公布号 |
US2005067663(A1) |
申请公布日期 |
2005.03.31 |
| 申请号 |
US20040950332 |
申请日期 |
2004.09.24 |
| 申请人 |
RAMKUMAR KRISHNASWAMY;NARAYANAN SUNDAR |
发明人 |
RAMKUMAR KRISHNASWAMY;NARAYANAN SUNDAR |
| 分类号 |
H01L21/28;H01L21/314;H01L29/49;H01L29/78;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
